Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-15T05:39:26.023Z Has data issue: false hasContentIssue false
  • English
  • Français

Boron Transient Enhanced Diffusion in Heavily Phosphorus Doped Silicon

Published online by Cambridge University Press:  03 September 2012

M. B. Huang,
U. Myler,
T. W. Simpson,
P. J. Simpson and
I. V. Mitchell
M. B. Huang
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada
U. Myler
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada
T. W. Simpson
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada
P. J. Simpson
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada
I. V. Mitchell
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario N6A 3K7, Canada
Get access

Abstract

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The Pdoped silicon was implanted with boron ions of 40 keV energy to a dose of 3 × 1014 cm-2, and then annealed at temperatures ranging from 700–1000°C in a N2 ambient for varying durations. As P doping concentration increased from 3 × 1019 to 1 × 1020 cm-3, boron diffusivity and the immobile boron fraction decreased. Our experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Michel, A. E., Nucl. Instrum. Methods B 37/38, 379 (1989).Google Scholar
2. Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Luftman, H. F., and Poate, J. M., Mater. Res. Soc. Symp. Proc. 354, 307 (MRS, 1995).Google Scholar
3. Solmi, S., Baruffaldi, F., and Canteri, R., J. Appl. Phys. 69, 2135 (1991).Google Scholar
4. Cowern, N. E. B., Cacciato, A., Custer, J. S., Saris, F. W., and Vandervorst, W., Appl. Phys. Lett. 68, 1150 (1996).Google Scholar
5. Fair, R. B., Wortman, J. J., and Liu, J., J. Electrochem. Soc. 131, 2387 (1984).Google Scholar
6. Fair, R. B., J. Electrochem. Soc. 137, 667 (1990).Google Scholar
7. Jäger, H. U., J. Appl. Phys. 78, 176 (1995).Google Scholar
8. Vandenbossche, E. and Baccus, B., J. Appl. Phys. 73, 7322 (1993).Google Scholar
9. Chao, H. S., Crowder, S. W., Griffin, P. B., and Plummer, J. D., J. Appl. Phys. 79, 2352 (1996).Google Scholar
10. Fahey, P. M., Griffin, P. B., and Plummer, J. D., Rev. Mod. Phys. 61, 289 (1989).Google Scholar
11. Lawther, D. W. and Simpson, P. J., Defect Diffus. Forum 138–139, 1 (1996).Google Scholar
12. Biersack, J. P. and Haggmark, L. G., Nucl. Instrum. Methods B 174, 257 (1980).Google Scholar
13. Roth, D. J. and Plummer, J. D., J. Electrochem. Soc. 141, 1074 (1994).Google Scholar