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Bulk Breakdown in AlGaN/GaN HFETs

Published online by Cambridge University Press:  10 February 2011

G. Gradinaru,
N. C. Kao,
R. Gaska,
J. Yang,
Q. Chen,
M. A. Khan and
T. S. Sudarshan
G. Gradinaru
Affiliation:
ECE Department, University of South Carolina, Columbia, SC 29208, gradinag@engr.se.edu
N. C. Kao
Affiliation:
ECE Department, University of South Carolina, Columbia, SC 29208, gradinag@engr.se.edu
T. S. Sudarshan
Affiliation:
ECE Department, University of South Carolina, Columbia, SC 29208, gradinag@engr.se.edu
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Abstract

A significant source current generated by a carrier multiplication process is observed at large drain voltages in the subthreshold regime, along with simultaneous increase of the gate current and light emission signal. Provided no on-surface premature breakdown takes place, a bulk channel avalanche breakdown process is proposed as the dominant breakdown mechanism for a large range of gate-to-source dc voltages. This process in the GaN channel is responsible for the excess source and drain currents, light emission, and excess gate current beyond its normal value measured in a gate-to-drain diode configuration. The role of the gate bias in controlling the channel vs. the gate breakdown mechanisms is described.

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References

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