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Buried Oxide Channel Field Effect Transistor

Published online by Cambridge University Press:  10 February 2011

J.A. Misewich and
A.G. Schrott
J.A. Misewich
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598
A.G. Schrott
Affiliation:
IBM Research, T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

A room temperature oxide channel field effect transistor with the channel on the surface was recently demonstrated at IBM which showed switching characteristics similar to conventional silicon FETs. In this paper we introduce a new architecture for the oxide channel transistor where the oxide channel material is buried below the gate oxide layer. This buried channel architecture has several significant advantages over the surface channel design in coupling capacitance, channel mobility, and channel stability. We will discuss the design and fabrication of the buried channel oxide FET and we will present results from these devices which demonstrate a higher transconductance.

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