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The Burstein-Moss Shift in Quantum Confined Infrared Materials

Published online by Cambridge University Press:  15 February 2011

Kamakeya P. Ghatak and
Badal De
Kamakeya P. Ghatak
Affiliation:
Department of Electronics and Tele-communication Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta - 700032, India.
Badal De
Affiliation:
96 Azalea Streeet, Paramus, NJO 7652, USA.
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Abstract

In this paper we have investigated the Burstein-Moss shift in quantum wires and dots of III-V and II-VI materials on the basis of Kane and Hopfield models for the appropriate carrier dispersion laws. It is found taking Hg1−xCdxTe, In1−xGax AsyP1−y lattice matched to InP and CdS as examples that the Burstein-Moss shift exhibits oscillatory dependences for quantum wires and dots of the said materials with respect to doping and film thickness respectively. Besides, the numerical value of the same shift is greatest in quantum dots and least in quantum wires. In addition, the theoretical analysis is in agreement with the experimental datas as given elsewhere.

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