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Carbon Doping into GaAs Using Low-Energy Hydrocarbon Ions

Published online by Cambridge University Press:  10 February 2011

Hirokazu Sanpei,
Takayuki Shima,
Yunosuke Makita,
Shinji Kimura,
Yasuhiro Fukuzawa,
Yo-ichi Nakamura and
Adarsh Sandhu
Hirokazu Sanpei
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, JapanTokai University, 1117 Kitakaname, Hiratsuka 259-1292, Japan
Takayuki Shima
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, JapanIndustrial Technology Researcher of the New Energy and Industrial Technology Development Organization
Yunosuke Makita
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan
Shinji Kimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan
Yasuhiro Fukuzawa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, JapanNippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minamisaitama 345-0826, Japan
Yo-ichi Nakamura
Affiliation:
Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minamisaitama 345-0826, Japan
Adarsh Sandhu
Affiliation:
Tokai University, 1117 Kitakaname, Hiratsuka 259-1292, Japan
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Abstract

The role of hydrogen (H) in carbon (C)-doped GaAs was examined by co-doping of C and H atoms using low-energy hydrocarbon (CH+ and CH3+) ions. Experiments were carried out using the combined ion beam and molecular beam epitaxy (CIBMBE) system. Samples were characterized by low-temperature photoluminescence at 2K and Hall effect measurements at room temperature. Results show that incorporated C atoms are optically and electrically activated as acceptors even by hydrocarbon ion impingement. The effect of H incorporation was found to be noticeable when impinged current density of CH3+ ion beam is high that produces equivalent net hole carrier concentration greater than ∼1018 cm−3

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