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Carrier Mapping in Thermoelectric Materials

Published online by Cambridge University Press:  05 August 2013

Georgios S. Polymeris,
Euripides Hatzikraniotis,
Eleni C. Stefanaki,
Eleni Pavlidou,
Theodora Kyratsi,
Konstantinos M. Paraskevopoulos and
Mercouri G. Kanatzidis
Georgios S. Polymeris
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Euripides Hatzikraniotis
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Eleni C. Stefanaki
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Eleni Pavlidou
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Theodora Kyratsi
Affiliation:
Department of Mechanical and Manufacturing Engineering, University of Cyprus, 1678 Nicosia, Cyprus.
Konstantinos M. Paraskevopoulos
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Mercouri G. Kanatzidis
Affiliation:
Department of Chemistry, Northwestern University, 2145 North Sheridan Road, Evanston, IL 60208, U.S.A
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Abstract

The application of micro-fourier transform infrared (FTIR) mapping analysis to thermoelectric materials towards identification of doping inhomogeneities is described. Micro-FTIR, in conjunction with fitting, is used as analytical tool for probing carrier content gradients. The plasmon frequency ω P 2 was studied as potential effective probe for carrier inhomogeneity and consequently doping differentiation based on its dependence of the carrier concentration. The method was applied to PbTe-, PbSe- and Mg2Si- based thermoelectric materials.

Keywords

thermoelectricinfrared (IR) spectroscopyPb

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