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Cavity Nucleation and Evolution in He-Implanted Si and GaAs

Published online by Cambridge University Press:  21 February 2011

D. M. Follstaedt,
S. M. Myers,
G. A. Petersen and
J. C. Barbour
D. M. Follstaedt
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Mail Stop 1056, Albuquerque, NM 87185
S. M. Myers
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Mail Stop 1056, Albuquerque, NM 87185
G. A. Petersen
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Mail Stop 1056, Albuquerque, NM 87185
J. C. Barbour
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Mail Stop 1056, Albuquerque, NM 87185
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Abstract

The criteria for forming stable cavities by He implantation and annealing are examined for Si and GaAs. In Si, implanting at room temperature requires a minimum of 1.6 at.% He to form a uniformly dense layer of cavities after annealing at 700°C. Near this threshold, cavities are located at dislocations and planar defects. Peak He concentrations just above 1.6 at.% produce narrow layers of cavities at the projected range. In GaAs, room-temperature implantation followed by annealing results in exfoliation of the surface layer. Cavities were formed instead by implanting Ar followed by overlapping He, both at 400°C, with additional annealing at 400°C to outgas the He. This method forms 1.5-3.5 nm cavities that are often on {111} planar defects.

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