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CdTe:Cl and CdTeSe:Cl Single Crystals Application for Radiation Detectors

Published online by Cambridge University Press:  21 February 2011

B.K. Meyer,
D.M. Hofmann,
W. Stadler,
M. Salk,
C. Eiche and
K.W. Benz
B.K. Meyer
Affiliation:
Technical University of Munich, Physik-Department E 16, D-8046 Garching, Germany
D.M. Hofmann
Affiliation:
Technical University of Munich, Physik-Department E 16, D-8046 Garching, Germany
W. Stadler
Affiliation:
Technical University of Munich, Physik-Department E 16, D-8046 Garching, Germany
M. Salk
Affiliation:
Kristallographisches Institut, University Freiburg, D-7800 Freiburg, Hebelstr. 25, Germany
C. Eiche
Affiliation:
Kristallographisches Institut, University Freiburg, D-7800 Freiburg, Hebelstr. 25, Germany
K.W. Benz
Affiliation:
Kristallographisches Institut, University Freiburg, D-7800 Freiburg, Hebelstr. 25, Germany
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Abstract

We report on electrical and optical properties of vertical Bridgman grown Cl-doped CdTe including the ternary compositions Cd0.9Zn0.1Te and CdTe0 9Se0.1 with respect to application as a radiation detector. Based on Hall effect measurements, photoinduced current spectroscopy (PICTS) and photoluminescence we infer that high resistive material with good performance is controlled by deep level defects. The resistivity is calculated as a function of the shallow acceptor concentration (Cl-A-centers) with the conclusion that a deep donor state at mid gap must be present.

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References

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