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Cerium Doped Bismuth Antimony

Published online by Cambridge University Press:  02 August 2012

Kevin C. Lukas,
Huaizhou Zhao,
Ryan L. Stillwell,
Zhifeng Ren and
Cyril P. Opeil
Kevin C. Lukas
Affiliation:
Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, U.S.A.
Huaizhou Zhao
Affiliation:
Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, U.S.A.
Ryan L. Stillwell
Affiliation:
National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306-4005, USA
Zhifeng Ren
Affiliation:
Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, U.S.A.
Cyril P. Opeil
Affiliation:
Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, U.S.A.
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Abstract

Bismuth-Antimony alloys have been shown to have high ZT values below room temperature, especially for single crystals. For polycrystalline samples, impurity doping and magnetic field have proven to be powerful tools in the search for understanding and improving thermoelectric performance. Nanopolycrystalline Bi0.88Sb0.12 doped with 0.05, 0.5 and 3 % Ce were prepared by ball milling and dc hot pressing techniques. Electrical resistivity, Seebeck coefficient, thermal conductivity, carrier concentration, mobility, and magnetization are measured in a temperature range of 5-350 K and in magnetic fields up to 9 Tesla. The effects of Ce doping on the thermoelectric properties of Bi0.88Sb0.12 in zero magnetic field are discussed.

Keywords

thermoelectricCeBi

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