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Channel Strain Characterization in Semiconductor Device by Techniques Based on Transmission Electron Microscope

Published online by Cambridge University Press:  13 September 2011

Jinghong Li,
Jeff Johnson,
Dureseti Chidambarrao,
Yunyu Wang and
Anthony G. Domenicucci
Jinghong Li*
Affiliation:
Microelectronics, STG, IBM, Hopewell Junction, NY 12533, USA
Jeff Johnson
Affiliation:
Microelectronics, STG, IBM, Hopewell Junction, NY 12533, USA
Dureseti Chidambarrao
Affiliation:
Microelectronics, STG, IBM, Hopewell Junction, NY 12533, USA
Yunyu Wang
Affiliation:
Microelectronics, STG, IBM, Hopewell Junction, NY 12533, USA
Anthony G. Domenicucci
Affiliation:
Microelectronics, STG, IBM, Hopewell Junction, NY 12533, USA
*
*Email: jinghong@us.ibm.com
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Abstract

Three techniques based on transmission electron microscope (TEM) have been successfully applied to measure strain/stress in the channel area of PMOS semiconductor devices with embedded SiGe in the source/drain areas: convergent beam electron diffraction (CBED), nano beam diffraction (NBD) and dark-filed holography (DFH). Consistent channel strain measurements from the three techniques on the same TEM sample (eSiGe PMOS with 17%Ge) were obtained. Reliable strain/stress measurement results in the channel area have been achieved with very good agreement with computer-aided design (TCAD) calculations.

Keywords

holographytransmission electron microscopy (TEM)stress/strain relationship

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1349: Symposium DD – Quantitative Characterization of Nanostructured Materials , 2011, mrss11-1349-dd04-03
Copyright
Copyright © Materials Research Society 2011

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References

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