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Characteristics of Excimer-Laser-Crystallized Polysilicon Films by Line Beam Scanning Method

Published online by Cambridge University Press:  21 February 2011

Young Min Jhon,
Dong Hwan Kim,
Hong Chu,
Chang Woo Lee and
Sang Sam Choi
Young Min Jhon
Affiliation:
Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
Dong Hwan Kim
Affiliation:
Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
Hong Chu
Affiliation:
Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
Chang Woo Lee
Affiliation:
Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
Sang Sam Choi
Affiliation:
Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
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Abstract

Characteristics of polysilicon films, crystallized by excimer laser annealing, have been investigated. The entire amorphous silicon film of 50 mm X 50 mm has been crystallized by scanning a line shape excimer laser beam, which basically reduces the nonuniformity in the beam overlap region of the 2-dimensional scanning method. The laser beam had a Gaussian profile in the scanning direction, which ensured good crystallization by the reversible transitions between the crystalline and amorphous states and was expected to give step annealing effect The laser energy density and substrate temperature were varied.

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