Hostname: page-component-7b7567c8c-2n9c9 Total loading time: 0 Render date: 2026-11-15T00:47:01.686Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization & Analysis of Sub-Grain Boundaries in Sequential Lateral Solidification Processed SOI Films

Published online by Cambridge University Press:  17 March 2011

M. A. Crowder,
A. B. Limanov,
B. A. Turk and
James S. Im
M. A. Crowder
Affiliation:
Division of Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, School of Engineering and Applied Science, Columbia University, New York, New York 10027
A. B. Limanov
Affiliation:
Division of Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, School of Engineering and Applied Science, Columbia University, New York, New York 10027
B. A. Turk
Affiliation:
Department of Electrical Engineering
James S. Im
Affiliation:
Division of Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, School of Engineering and Applied Science, Columbia University, New York, New York 10027
Get access

Abstract

The nature of the formation of sub-grain boundaries within sequential lateral solidification (SLS) processed thin silicon films has been examined using single crystal Si films as a pre- cursor material. Experimental details include the use of an excimer laser projection system and straight-slit beamlets to produce directionally solidified microstructures. Within the SLS processed silicon-on-insulator (SOI) films, three microstructurally distinct regions are identi-fied: (1) an initial planar defect-free area (the extent of which can depend on laser fluence and orientation); (2) a transitional area within which the sub-grain boundaries appear and propagate in a well-defined direction relative to the crystallographic orientation; and (3) a final area characterized by sub-grain boundaries aligning approximately to the scan direction, and the in-plane texture becoming more random. We discuss the results within the context of a plastic deformation model of sub-grain boundary formation.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Im, J. S., Crowder, M. A., Sposili, R. S., Leonard, J. P., Kim, H. J., Yoon, J. H., Gupta, V. V., Song, H. J., and Cho, H. S., Physica Status Solidi 166, 603 (1998).Google Scholar
[2] Sposili, R. S. and Im, J. S., Appl. Phys. Lett. 69, 2864 (1996).Google Scholar
[3] Im, J. S., Sposili, R. S., and Crowder, M. A., Appl. Phys. Lett. 70, 3434 (1997).Google Scholar
[4] Limanov, A. B., Borisov, V. M., Vinokhodov, A. Y., Demin, A. I., El'tsov, A. I., Kirukhin, Y. B., and Khristoforov, O. B., in Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, edited by Hemment, P. L. F. (Kluwer Academic Publishers, New York, 2000), pp. 55–61.Google Scholar
[5] Dassow, R., Kohler, J., Helen, Y., Mourgues, K., Bonnaud, O., Mohammed-Brahim, T., and Werner, J., Semiconductor Science and Technology 15, L31 (2000).Google Scholar
[6] Crowder, M. A., Limanov, A. B., and Im, J. S., in Electron-Emissive Materials, Vacuum Microelectronics, and Flat-Panel Displays, edited by Jensen, K. L., Mackie, W., Temple, D., Itoh, J., Nemanich, R., Trottier, T., and Holloway, P. (Mater. Res. Soc. Proc., Pittsburg, Penn., 2000), Vol. 621, accepted for Publication.Google Scholar
[7] Kim, H. J. and Im, J. S., Appl. Phys. Lett. 68, 1513 (1996).Google Scholar
[8] George, A., Materials Science and Engineering A A233, 88 (1997).Google Scholar
[9] Larson, B. C., White, C. W., and Appleton, B. R., Appl. Phys. Lett. 32, 801 (1978).Google Scholar
[10] Tiller, W. A., The Science of Crystallization: Macroscopic Phenomena and Defect Generation (Cambridge University Press, Cambridge, 1991).Google Scholar
[11] Chalmers, B., Principles of Solidification (John Wiley & Sons, Inc., New York, 1964).Google Scholar
[12] Leonard, J. P. and Im, J. S., in Nucleation and Growth Processes in Materials, edited by Gonis, A., Turchi, P. E. A., and Ardell, A. J. (Mater. Res. Soc. Proc., Pittsburg, Penn., 2000), Vol. 580, pp. 233–244.Google Scholar