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Characterization and Modeling of Pad Asperity Response in CMP

Published online by Cambridge University Press:  01 February 2011

Duane Boning and
Wei Fan
Duane Boning
Affiliation:
boning@mtl.mit.edu, MIT, Microsystems Technology Laboratories, Electrical Engineering and Computer Science, Cambridge, Massachusetts, United States
Wei Fan
Affiliation:
fanwei@mtl.mit.edu, MIT, Microsystems Technology Laboratories, Electrical Engineering and Computer Science, Cambridge, Massachusetts, United States
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Abstract

A model is proposed to understand the interactions between CMP pad asperities and the wafer. Pad asperity reduced modulus and height distribution are included in the model. Physical measurements of asperity properties are performed: asperity reduced modulus is measured by nanoindentation, and pad asperity height distribution is scanned by profilometry. The measured results are used in the model to predict the contact area percentage between the pad and wafer in the CMP process.

Keywords

CMPmicroelectronicsnano-indentation

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References

1 Xie, X. Physical Understanding and Modeling of Chemical Mechanical Planarization in Dielectric Materials, Ph.D. thesis EECS, Massachusetts Institute of Technology, Cambridge (2007).Google Scholar
2 Fan, W. Boning, D. Charns, L. Miyauchi, H. Tano, H. and Tsuji, S. J. Electrochem. Soc., 157 (5), p. H526 (2010).Google Scholar
3 Guoda, S. D. Bastawros, A. and Chandra, A. Mater. Res. Soc. Symp. Proc. 60, paper F2.5.1, San Francisco, CA, (2003).Google Scholar
4 Borucki, L. Zhuang, R. Sun, T. Zhuang, Y. Philipossian, A. and Slutz, D. Mechanical and Optical Analysis of Pad Surface Micro-texture Differences Caused by Conditioning, International Conference on Planarization Technology, Foster City, CA (2006).Google Scholar
5 Borucki, L. China Semiconductor International Technology Conference (CSITC), Shanghai, China (2010).Google Scholar
6 Borucki, L. J. Eng. Math. 43, 105 (2002).Google Scholar
7 Borucki, L. J. Witelski, T. Please, C. Kramer, P. R. and Schwendeman, D. J. Eng. Math. 50, 1 (2004).Google Scholar
8 Lawing, A. S. Pad Conditioning and Textural Effects in Chemical Mechanical Polishing, Proc. CMP-MIC Conf., paper 2.C, (2005).Google Scholar
9 Vlassak, J. J. J. Mech. Phys. Solids 52, 847 (2004).Google Scholar
10 Greenwood, J. A. and Williamson, J. B. P. Contact of Nominally Flat Surfaces, Proceedings of the Royal Society of London, Series A, Mathematical and Physical Sciences, vol. 295, no. 1442, pp. 300–319 (1966).Google Scholar
11http://www.jsrmicro.com/pro_CMP_pad.html html, last accessed in March 2010.Google Scholar
12http://www.jsr.co.jp/jsr_e/pd/images/pad.pdf , pdf, last accessed in March 2010.Google Scholar
13 Charns, L. Sugiyama, M. and Philipossian, A. Thin Solid Films, 485, 188 (2005).Google Scholar
14 Fischer-Cripps, A. C., Nanoindentation, 2nd ed, p. 31, Springer, New York, (2004).Google Scholar
15 Tweedie, C. A. Constantinides, G. Lehman, K. E. Brill, D. J. Blackman, G. S. and Van, K. J. Vliet, Adv. Mater., 19, 2540 (2007).Google Scholar
16 Luo, J. and Dornfeld, D. A. Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication, p. 179, Springer, Berlin, (2004).Google Scholar