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Characterization, Control, and Reduction of Subboundaries inSilicon on Insulators

Published online by Cambridge University Press:  25 February 2011

M. W. Geis,
C. K. Chen,
Henry I. Smith,
R. W. Mountain and
C. L. Doherty
M. W. Geis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
C. K. Chen
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
Henry I. Smith
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. W. Mountain
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
C. L. Doherty
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
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Abstract

Subboundaries are the major crystalline defects in thin semiconductor filmsproduced by zone-melting recrystallization (ZMR). Using transmissionelectron microscopy (TEM) and chemical etching we have analyzed the angulardiscontinuity and defect structure of subboundaries in ZMR Si films.Annealing in oxygen has resulted in the elimination of dislocation bandsfrom sizable regions of some films. Calculations suggest that cellulargrowth due to constitutional supercooling may not occur in some Si ZMR.

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