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Characterization of Cu-Al alloy/SiO2 interface microstructure

Published online by Cambridge University Press:  14 March 2011

Pei-I Wang ,
S. P. Murarka ,
G.-R. Yang ,
E. Barnat ,
T.-M. Lu ,
Y.-C. Chen ,
Xiang Li  and
K. Rajan
Pei-I Wang
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, NY 12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, NY 12180
G.-R. Yang
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, NY 12180
E. Barnat
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, NY 12180
T.-M. Lu
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, NY 12180
Y.-C. Chen
Affiliation:
Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy NY 12180
Xiang Li
Affiliation:
Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy NY 12180
K. Rajan
Affiliation:
Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy NY 12180
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Abstract

Cu-Al alloys have been recommended for application as the diffusion barriers/adhesion promoters for advanced copper based metallization schemes. This approach to barrier formation is to generate an ultra-thin interfacial layer through Cu alloying without significantly affecting the resistivity of Cu. In this paper the microstructure of the bilayers of Cu/Cu-5 at%Al and Cu-5 at%Al/Cu sputter deposited on SiO2 before and after thermal annealing is investigated by transmission electron microscopy (TEM). Interfacial layer is observed in both cases. The variation of the resistance of the Cu-Al alloy film is consistent with its microstructure. The x-ray diffraction (XRD) spectra of Cu-5 at%Al on SiO2 shows that the addition of Al into Cu intends to favor the Cu (111) texture. These results will be presented and discussed showing that films of Cu doped with Al appear to act as a suitable barrier and adhesion promoter between SiO2 and Cu.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 615: Symposium G – Polycrystalline Metal & Magnetic Thin Films - 2000 , 2000 , G7.5.1
Copyright
Copyright © Materials Research Society 2000

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References

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