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Characterization of Defect Structures by Perturbed Angular Correlation Technique

Published online by Cambridge University Press:  26 February 2011

Thomas Wichert
Thomas Wichert*
Affiliation:
Fakultät für Physik, Universität Konstanz, Bücklestrape 13, D-7750 Konstanz, West Germany
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Abstract

In applications of the perturbed angular correlation (PAC) technique to the characterization of defect structures in materials conclusions are drawn from the local electric field gradient measured at the site of a radioactive probe atom. In metals, PAC has been very successful in labeling and identifying simple probe atom-defect pairs. Based on these results, new experiments were performed on defect structures in cold-worked samples, on the dynamics of He-defect interactions and on the growth of vacancy clusters. Recent results on interactions between the acceptor atom In and different donor atoms or intrinsic defects in Si indicate that PAC may provide atomistic information also in the case of semiconductor materials.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 35
Copyright
Copyright © Materials Research Society 1987

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References

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