Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-15T21:27:37.148Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Defects in Proton-ImplantedGaAs

Published online by Cambridge University Press:  25 February 2011

H. A. Jenkinson,
G. N. Maracas,
M. O'Tooni and
R. G. Sarkis
H. A. Jenkinson
Affiliation:
U. S. Army Armaments Research and Development Center, Dover, NJ 07801-5001
G. N. Maracas
Affiliation:
Arizona State University, Center for Solid State Electronics Research, Tempe, AZ 85287
M. O'Tooni
Affiliation:
U. S. Army Armaments Research and Development Center, Dover, NJ 07801-5001
R. G. Sarkis
Affiliation:
U. S. Army Armaments Research and Development Center, Dover, NJ 07801-5001
Get access

Abstract

Studies have been made of n+-GaAs implanted with 300 keV protonsto fluences of 1014−1016/cm2. Electricalstudies included I–V analysis, DLTS, and thermally stimulated currentmeasurements made on implanted FET-like structures fabricated from MBE GaAsepi-layers. Optical infrared reflectance spectra and high resolutiontransmission electron micrographs were obtained for as-implanted materialand for specimens annealed at 300 °C and 500 °C. Results show as-implantedmaterial can be characterized by a band of traps lying about 0.2 eV belowthe conduction band with a relatively uniform distribution throughout theimplanted region. Thermal processing causes a significant alteration in thedensity and distribution of these defects.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Speight, J.D., Leigh, P., McIntyre, N., Groves, I. G., and O'Hara, S., Electron. Lett. 10, 98–99, (1974).Google Scholar
2. Garmire, E., Stoll, H., Yarive, A., and Hunsperger, R. G., Appl. Phys. Lett., 21, 87–88, (1972).Google Scholar
3. Gibbons, J. F., Johnson, W. S., and Mylorie, S. W., Projected Range Statistics, 2nd Edition (Dowden, Hutchinson, and Ross, Stroudsburg, PA 1975).Google Scholar
4. Zavada, J. M., Sadana, D. K., Wilson, R., Sarkis, R. G., and Jenkinson, H. A., Proceedings of SPIE Conference 530 - Advanced Applications of Ion Implantation, Paper 530–26, Los Angeles (1985).Google Scholar
5. Maracas, G. N., Laidig, W. D., and Wittman, H. R., J. Vac. Sci. Tech., JVST-B2 July/Sept. #3, (1984).Google Scholar
6. Jenkinson, H. A. and Larson, D. C., NASA Conference Publication 2207, 231–240, Hampton, VA (1981).Google Scholar
7. Jenkinson, H. A., O'Tooni, M., Zavada, J. M., Haar, T. J., and Larson, D. C., Proceedings of the Fall Meeting of the Materials Research Society, Paper E7.22, Boston, MA (1983).Google Scholar
8. Lang, D. V., Logan, R. A., and Kimerling, L. C., Phys. Rev. B, 15, 4874–4882, (1977).Google Scholar