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Characterization of Polysilicon Thin Films by Variable Angle Spectroscopic Ellipsometry

Published online by Cambridge University Press:  21 February 2011

Yi-Ming Xiong,
Paul G. Snyder,
John A. Woollam,
Eric R. Krosche and
Yale Strausser
Yi-Ming Xiong
Affiliation:
University of Nebraska, Department of Electrical Engineering, Lincoln, NE 68588-0511
Paul G. Snyder
Affiliation:
University of Nebraska, Department of Electrical Engineering, Lincoln, NE 68588-0511
John A. Woollam
Affiliation:
University of Nebraska, Department of Electrical Engineering, Lincoln, NE 68588-0511
Eric R. Krosche
Affiliation:
INTEL Corporation, 4100 Sara Road, Rio Rancho, NM8 7124
Yale Strausser
Affiliation:
Instruments SA, 1211 Manitou Road, Santa Barbara, CA 93101
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Abstract

Variable angle spectroscopic ellipsometry was used to characterize polysilicon multilayer structures. Five different multilayer wafers, each containing a polysilicon layer, were studied. Layer thicknesses and compositions were determined at several locations across each wafer. The thickness measurements obtained by ellipsometry are compared with those determined from cross-sectional transmission electron microscopy (XTEM).

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990, 219
Copyright
Copyright © Materials Research Society 1990

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References

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