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Characterization of Semi-insulating SiC

Published online by Cambridge University Press:  01 February 2011

Nguyen Tien Son,
Patrick Carlsson,
Björn Magnusson and
Erik Janzén
Nguyen Tien Son
Affiliation:
son@ifm.liu.se, Linköping University, Department of Physics, Chemistry and Biology, SE-581 83 Linköping, Linköping, N/A, 581 83, Sweden, +46-13-282531, +46-13-142337
Patrick Carlsson
Affiliation:
paca@ifm.liu.se, Linköping University, Department of Physics, Chemistry and Biology, Linköping, N/A, SE-581 83, Sweden
Björn Magnusson
Affiliation:
bjmag@ifm.liu.se, Linköping University, Department of Physics, Chemistry and Biology, Linköping, N/A, SE-581 83, Sweden
Erik Janzén
Affiliation:
erj@ifm.liu.se, Linköping University, Department of Physics, Chemistry and Biology, Linköping, N/A, SE-581 83, Sweden
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Abstract

Electron paramagnetic resonance was used to study defects in high-purity semi-insulating (HPSI) substrates grown by high-temperature chemical vapor deposition and physical vapor transport. Deep level defects associated to different thermal activation energies of the resistivity ranging from ~0.6 eV to ~1.6 eV in HPSI substrates are identified and their roles in carrier compensation processes are discussed. Based on the results obtained in HPSI materials, we discuss the carrier compensation processes in vanadium-doped SI SiC substrates and different activation energies in the material.

Keywords

defectselectron spin resonanceV

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