Hostname: page-component-7b7567c8c-kwt9d Total loading time: 0 Render date: 2026-11-15T01:50:10.218Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Thin Films by Internal Friction Measurements

Published online by Cambridge University Press:  22 February 2011

H. G. Bohn and
C. M. Su
H. G. Bohn
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, Postfach 1913, 5170 Jülich 1, Germany
C. M. Su
Affiliation:
On leave of absence from Institute of Solid State Physics, Academia Sinica.
Get access

Abstract

ABSTRACT: Internal friction has been employed to characterize various properties of thin Al and Al-alloy films. The grain boundary relaxation peak was used

a) to determine the activation energies for grain boundary diffusion in the alloy films,

b) to investigate the influence of impurities on the grain boundary diffusion in Al at concentration levels as low as 300 ppm, and

c) to get information about the adhesion strength between the film and the substrate.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Nowick, A.S. and Berry, B.S., Anelastic Relaxation in Crystalline Solids (Academic Press, N. Y., 1972).Google Scholar
2. de Batist, R., Internal Friction of Structural Defects in Crystalline Solids (North-Holland, Amsterdam, 1972).Google Scholar
3. Berry, B.S., in Diffusion Phenomena in Thin Films and Microelectronic Materials, edited by Gupta, D. and Ho, P.S. (Noyes, Park Ridge, NJ, 1988), pp. 73–145.Google Scholar
4. Berry, B.S. and Pritchet, W.C., J. de Physique, 42, C5–1111 (1981).Google Scholar
5. Bohn, H.G., Vollkommer, F., and Robroek, K.-H., Proceedings of the 9th ICIFUAS. Beijing 1989 (Pergamon Press, Oxford, 1990), 587.Google Scholar
6. ref. 1, chap. 17.3.Google Scholar
7. ref. 1, chap. 15.6.Google Scholar
8. Vollkommer, F., Bohn, H.G., Robroek, K.-H., and Schilling, W., 28th Annual Proceedings Reliability Physics, 51 (1990).Google Scholar
9. Su, C.M., Bohn, H.G., Robroek, K.-H., and Schilling, W., J. Appl. Phys., 70, 2086 (1991).CrossRefGoogle Scholar
10. The alloy samples were kindly provided by Kücher, Dr. (Siemens AG, Munich) and Dirks, Dr. (Philips Research Laboratories, Eindhoven).Google Scholar
11. Ref. 1, p. 461.Google Scholar
12. Kë, T.S., Phys. Rev., 71, 533 (1947).CrossRefGoogle Scholar