Hostname: page-component-7b7567c8c-wxvwp Total loading time: 0 Render date: 2026-11-14T22:59:28.819Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of TiN Diffusion Barrier for Submicron Technology

Published online by Cambridge University Press:  25 February 2011

G. A. Dixit,
F. S. Chen,
H. Zhang,
G. D. Yao,
C. C. Wei and
F. T. Liou
G. A. Dixit
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, MS2200, Carrollton, TX 75006.
F. S. Chen
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, MS2200, Carrollton, TX 75006.
H. Zhang
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, MS2200, Carrollton, TX 75006.
G. D. Yao
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, MS2200, Carrollton, TX 75006.
C. C. Wei
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, MS2200, Carrollton, TX 75006.
F. T. Liou
Affiliation:
SGS-THOMSON MICROELECTRONICS, 1310 Electronics Drive, MS2200, Carrollton, TX 75006.
Get access

Abstract

The electrical properties and structure of reactively sputtered titanium nitride barrier metal films have been characterized. Junction leakages and yields for different post deposition treatments of the barrier metal layer are reported. TEM, x-ray diffraction and Auger electron spectroscopy have been used for the physical characterization of the TiN films.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Chen, F. S., Lin, Y. S., Dixit, G. A., Sundaresan, R., Wei, C. C. and Liou, F. T., “Pla-narized Aluminum Metallization For Sub- 0.5μm CMOS Technology,” Proc. IEDM, 1990, pp. 51.Google Scholar
2. Lai, W. Y. C., Cheung, K. P., Favreau, D. P., Case, C., Liu, R. and Murray, R. G., “CVD Aluminum for Submicron VLSI Metallization,” Proc. VMIC, 1991, pp. 89.Google Scholar
3. Mukai, R., Iizuka, M., Kudo, H. and Nakano, M., “Metal Plugs Produced by Excimer Laser Melting for Submicron Interconnection: Mechanisms, Electrical Properties,” Proc. VMIC, 1991, pp. 192.Google Scholar
4. Raaijmakers, I. J. and Sherman, A., “Contact Hole Fill with Low Temperature LPCVD TiN,” Proc. VMIC, 1990, pp. 219.Google Scholar
5. Ahn, K. Y., Wittmer, M. and Ting, C. Y., “Investigation of TiN Films Reactively Sputtered Using a Sputter Gun,” Thin Solid Films, 107, 1983, pp. 45.Google Scholar
6. Gonzales, S., Magnella, C., Boeck, B., Cox, K., Huebinger, L., Mosley, R., Nul-man, J. and Gilboa, H., “Performance of a Sequentially Deposited Ti/TiN/AlCuSi Metllization Structure,” Proc. VMIC, 1991, pp. 316.Google Scholar