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Characterization of Zirconium - Diamond Interfaces

Published online by Cambridge University Press:  15 February 2011

P. K. Baumann,
S. P. Bozeman,
B. L. Ward and
R. J. Nemanich
P. K. Baumann
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
S. P. Bozeman
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
B. L. Ward
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

Thin Zr films were deposited on natural single crystal diamond (100) substrates by ebeam evaporation in ultra-high vacuum (UHV). Before metal deposition the surfaces were cleaned by UHV anneals at either 500°C or 1150°C. Following either one of these treatments a positive electron affinity was determined by means of UV photoemission spectroscopy (UPS). Depositing 2Å of Zr induced a NEA on both surfaces. Field emission current - voltage measurements resulted in a threshold field (for a current of 0.1 µA) of 79 V/µm for positive electron affinity diamond surfaces and values as low as 20 V/µm for Zr on diamond.

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