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Characterization of ZnSe:N Using Screening Effects

Published online by Cambridge University Press:  15 February 2011

I. Kuskovsky and
G. F. Neumark
I. Kuskovsky
Affiliation:
Department of Chemical Engineering, Materials Science, & Mining Engineering, Columbia University, New York, NY 10027.
G. F. Neumark
Affiliation:
Department of Chemical Engineering, Materials Science, & Mining Engineering, Columbia University, New York, NY 10027.
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Abstract

Photoluminescence (PL) and Hall measurements allow one to obtain important parameters of semiconductors, such as impurity concentrations, compensation, and activation energies (E A ). Usual analyses of such data assume constant E A . However, it is well known that EA depends on free carrier and impurity concentrations, and thus on temperature, due to screening effects. We here analyze literature data on ZnSe:N using screening effects. An observed decrease of E A with temperature (from PL data) had been used to suggest an interstitial site for N. With inclusion of screening, we obtained good agreement with the data, so that the idea of interstitial N is not required. In applying the screening theory to Hall measurements, we obtained lower impurity concentrations than with use of a constant E A . It is also to be noted that we fit both optical and electrical data with this approach. We further suggest that screening is the cause of an observed difference between optically observed and thermal activation energies.

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References

1. Krieger, J.B., Phys. Rev., 178, 1337 (1969)Google Scholar
2. Neumark, G.F., Phys. Rev. B, 5, 408 (1972)Google Scholar
3. Ziman, J.M., Principals of the Theory of Solids, 2nd ed. (Cambridge University Press, 1972).Google Scholar
4. Neumark, G.F., J. Appl. Phys., 48, 3618 (1977).Google Scholar
5. Bowers, K.A., Yu, Z., Gossett, K.J., Cook, J.W. Jr., and Schetzina, J.F., J. Elect. Mat., 23, 251 (1994).Google Scholar
6. Dingel, R.B.. Phil. Mag., 46, 831 (1955).Google Scholar
7. Baldareschi, A., Lipari, N.O., Phys. Rev. B, 8, 2697 (1973).Google Scholar
8. Yi, G.-J. and Neumark, G.F., Phys. Rev. B, 48, 17043 (1993).Google Scholar
9. Han, J., Fan, Y., Ringle, M.D., He, L., Grillo, D.C., Gunshor, R.L., Hua, G.C., and Otsuka, N., J. Crystal Growth, 138, 464 (1994).Google Scholar
10. Fan, Y., Han, J., He, L., Gunshor, R.L., Hagerott, M., and Nurmikko, A.V., J. Elect. Mat., 23, 245 (1994)Google Scholar
11. Brooks, H., in Advances in Electronic and Electron Physics, 7, (Academic Press, New York, 1955), p. 156.Google Scholar
12. Neumark, G.F. and Schroder, D.K., J. Appl. Phys., 52, 855 (1981).Google Scholar
13. Kranzer, D., Phys. Status Solidi A, 26, 11 (1974).Google Scholar
14. Schetzina, J.F., private communication.Google Scholar
15. Yao, T., Matsumoto, T., Sasaki, S., Chung, C.K., Zhu, Z.. Nishiyama, F., J. Crystal Growth, 138, 290, (1994).Google Scholar