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Characterizing the Two-Dimensional Doping Concentration inside Silicon-Nanowires Using Scanning Spreading Resistance Microscopy

Published online by Cambridge University Press:  31 January 2011

Thomas Hantschel,
Volker Schulz,
Andreas Schulze,
Esteban Angeletti,
Firat Guder,
Volker Schmidt,
Stephan Senz,
Pierre Eyben and
Wilfried Vandervorst
Thomas Hantschel
Affiliation:
thomas.hantschel@imec.be, IMEC, Kapeldreef 75, Leuven, B-3001, Belgium
Volker Schulz
Affiliation:
sch_volker@web.de, IMEC, Leuven, Belgium
Andreas Schulze
Affiliation:
andreas.schulze@imec.be, IMEC, Leuven, Belgium
Esteban Angeletti
Affiliation:
estebanangeletti@yahoo.com, IMEC, Leuven, Belgium
Firat Guder
Affiliation:
fguder@gmail.com, IMEC, Leuven, Belgium
Volker Schmidt
Affiliation:
vschmidt@mpi-halle.mpg.de, Max Planck Institute of Microstructure Physics, Halle, Germany
Stephan Senz
Affiliation:
senz@mpi-halle.mpg.de, Max Planck Institute of Microstructure Physics, Halle, Germany
Pierre Eyben
Affiliation:
pierre.eyben@imec.be, IMEC, Leuven, Belgium
Wilfried Vandervorst
Affiliation:
vdvorst@imec.be, IMEC, Leuven, Belgium
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Abstract

The characterization of doped regions inside silicon nanowire structures poses a challenge which must be overcome if these structures are to be incorporated into future electronic devices. Precise cross-sectioning of the nanowire along its longitudinal axis is required, followed by two-dimensional electrical measurements with nanometer spatial resolution. The authors have developed an approach to cross-section silicon nanowires and to characterize them by scanning spreading resistance microscopy (SSRM). This paper describes a cleaving- and polishing-based cross-sectioning method for silicon nanowires. High resolution SSRM measurements are demonstrated for epitaxially grown and etched silicon nanowires.

Keywords

scanning probe microscopy (SPM)nanostructureelectrical properties

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References

REFERENCES

1 Verhulst, A.S. Vandenberghe, W.G. Maex, K. Gendt, S. De, Heyns, M.M. and Groeseneken, G. IEEE Electron Device Letters 29, 1398(2008).Google Scholar
2 Westwater, J. Gosain, D. P. Tomiya, S. Usui, S. and Ruda, H. J. Vac. Sci. Technol. B 15, 554(1997).Google Scholar
3 Cui, Y. and Lieber, C.M. Science 291, 851(2001).Google Scholar
4 Schmidt, V. Senz, S. and Gösele, U., Nano Lett. 5, 931(2005).Google Scholar
5 Wang, Y. Schmidt, V. Senz, S. and Gösele, U., Nature Nanotechnology 1, 186(2006).Google Scholar
6 Wolf, P. De, Snauwaert, J. Clarysse, T. Vandervorst, W. and Hellemans, L. Appl. Phys. Lett. 66, 1530(1995).Google Scholar
7 Eyben, P. Vandervorst, W., Alvarez, D. Xu, M. and Fouchier, M. in: Scanning Probe Microscopy, edited by Kalinin, S. and Gruverman, A. (Springer, 2007), p. 31.Google Scholar
8 Hantschel, T., Niedermann, P. Trenkler, T. and Vandervorst, W. Appl. Phys. Lett. 76, 1603(2000).Google Scholar
9 Hantschel, T. Demeulemeester, C. Eyben, P. Schulz, V. Richard, O. Bender, H. and Vandervorst, W. Phys. Status Solidi A, submitted for publication.Google Scholar
10 Agarwal, P. Vijayaraghavan, M.N. Neuilly, F. Hijzen, E. and Hurkx, G.A.M. Nano Lett. 7, 896(2007).Google Scholar