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Chemical Effects in Ion Implantation Induced Quantum WellIntermixing

Published online by Cambridge University Press:  17 March 2011

Todd W. Simpson,
Paul G. Piva and
Ian V. Mitchell
Todd W. Simpson
Affiliation:
University of Western Ontario, Department of Physics & Astronomy, London, ON, N6A 3K7, CANADA
Paul G. Piva
Affiliation:
University of Western Ontario, Department of Physics & Astronomy, London, ON, N6A 3K7, CANADA
Ian V. Mitchell
Affiliation:
University of Western Ontario, Department of Physics & Astronomy, London, ON, N6A 3K7, CANADA
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Abstract

Ion implantation followed by rapid thermal annealing is used to induce layerintermixing and thus selectively blue-shift the emission wavelength ofInP-based quantum well hetero- structures. The intermixing is greatlyenhanced over thermal intermixing due to the supersaturation of defects. Themagnitude of the observed blue-shift has been studied previously as afunction of ion fluence and ion mass: the dependence on ion mass is wellestablished, with heavier ions producing a larger shift. We show here thatchemical effects can also play a significant role in determining the inducedblue-shift. Data are presented from the implantation of the similar massions; aluminum (m~27), silicon (m~28) and phosphorus (m~31). The P- inducedblue shift displays a monotonic increase with fluence, consistent withprevious studies; however, the fluence dependence of Al- and Si-inducedblue-shifts both deviate significantly from the behaviour for P. Theseresults have important implications for attempts to scale intermixingbehaviour with ion mass.

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References

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