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Colloidal quantum dot active layer electroluminescence in a solid GaN matrix

Published online by Cambridge University Press:  01 February 2011

Jennifer Pagan ,
Edward Stokes ,
Kinnari Patel ,
Casey Burkhart  and
Mike Ahrens
Jennifer Pagan
Affiliation:
jpagan@dotmetricstech.com, Dot Metrics Technologies, 1670 Sanridge Wind Lane, Charlotte, NC, 28262, United States, 704-905-6635
Edward Stokes
Affiliation:
Dot Metrics Technologies, 1670 Sanridge Wind Lane, Charlotte, NC, 28262, United States, 704-905-6635
Kinnari Patel
Affiliation:
Dot Metrics Technologies, 1670 Sanridge Wind Lane, Charlotte, NC, 28262, United States, 704-905-6635
Casey Burkhart
Affiliation:
Dot Metrics Technologies, 1670 Sanridge Wind Lane, Charlotte, NC, 28262, United States, 704-905-6635
Mike Ahrens
Affiliation:
Dot Metrics Technologies, 1670 Sanridge Wind Lane, Charlotte, NC, 28262, United States, 704-905-6635
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Abstract

In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal CdSe quantum dots into a GaN LED active layer is demonstrated. The conductivity of the overgrowth was examined by circular transmission line method (CTLM). Effects on surface roughness due to the active layer incorporation are examined using atomic force microscopy (AFM). LED test devices were fabricated and electroluminescence was demonstrated, the devices exhibit higher turn-on voltages than would be expected for a CdSe active layer.

Keywords

nitridemolecular beam epitaxy (MBE)semiconducting

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References

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