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Combinatorial Synthesis Approach for Optimizing Oxide/Si Interfaces for the Future Ulsi

Published online by Cambridge University Press:  17 March 2011

T. Chikyow,
P. Ahmet,
T. Naruke,
K. Nakajima,
N. Okazaki,
K. Hasegawa,
H. Minami,
K. Itaka,
T. Koida and
J.H. Song
...Show all authors
T. Chikyow
Affiliation:
COMET-NIMS,National Institute for Material Science 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 Japan e-mail: CHIKYO.toyohiro@nims.go.jp
P. Ahmet
Affiliation:
COMET-NIMS,National Institute for Material Science 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 Japan e-mail: CHIKYO.toyohiro@nims.go.jp
T. Naruke
Affiliation:
COMET-NIMS,National Institute for Material Science 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 Japan e-mail: CHIKYO.toyohiro@nims.go.jp
K. Nakajima
Affiliation:
COMET-NIMS,National Institute for Material Science 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 Japan e-mail: CHIKYO.toyohiro@nims.go.jp
N. Okazaki
Affiliation:
COMET-NIMS,National Institute for Material Science 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 Japan e-mail: CHIKYO.toyohiro@nims.go.jp
K. Hasegawa
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa, 226-8503, Japan
H. Minami
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa, 226-8503, Japan
K. Itaka
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa, 226-8503, Japan
T. Koida
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa, 226-8503, Japan
J.H. Song
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa, 226-8503, Japan
M. Yoshimoto
Affiliation:
Ceramic Materials and Structure Laboratory Tokyo Institute of Technology 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa 226-8503, Japan.
T. Hasegawa
Affiliation:
Ceramic Materials and Structure Laboratory Tokyo Institute of Technology 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa 226-8503, Japan.
M. Kawasaki
Affiliation:
Institute for Metal Research, Tohoku University 2-1-1 Katahita, Aoba-ku, Sendai 980-8577, Miyagi, Japan.
H. Koinima
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa, 226-8503, Japan COMET-NIMS, National Institute for Material Science 1-1Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Abstract

A combinatorial material synthesis with temperature gradient heating system was employed to optimizing growth parameters for oxide growth on Si substrate. From the obtained results, it was found the dielectric property depends on the growth temperature as well as the composition. The interface structures were investigated by high resolution electron microscopy with a series of specimens fabricated by micro sampling method. The results showed that amorphous oxide region and SiO2 layer were formed at the interface. It was speculated that the amorphous oxide region contributed to the reduction of the dielectric property. To avoid the amorphous and SiO2 formation at the oxide/Si interface, a few kinds of intermediate layers were inserted and tested to find the possibility of abrupt interface formation.

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