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Comparison of Gate Oxide Processing Techniques for Thin Dielectric Films

Published online by Cambridge University Press:  10 February 2011

Pat Schay,
Fuyu Lin,
Sergio Ajuria and
John Stih
Pat Schay
Affiliation:
Advanced Custom Technologies, Motorola, Mesa, AZ 85202
Fuyu Lin
Affiliation:
Advanced Custom Technologies, Motorola, Mesa, AZ 85202
Sergio Ajuria
Affiliation:
Advanced Custom Technologies, Motorola, Mesa, AZ 85202Semiconductor Technologies Laboratory, Motorola, Austin, TX 78721
John Stih
Affiliation:
Advanced Custom Technologies, Motorola, Mesa, AZ 85202
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Abstract

This paper focuses on establishing a baseline for thin dielectric processes including: low temperature, dilute, stacked (TEOS), oxynitride, and high temperature annealed (grow‐anneal‐grow) oxidation. 105Å (total thickness) gate dielectrics were grown or deposited for this study. The stack oxide showed the highest Vbd yields for both large‐area and edge‐intensive capacitors, but the poorest Qbd. The N2O oxide yielded mediocre Vbd and Qbd. The low temperature and dilute oxides showed early breakdowns, but acceptable Qbd. 900°C thermal gate oxide showed slightly better average Vbd than low temperature and dilute oxides but comparable Qbd. The high temperature annealed oxide appears to have the best electrical performance, but the worst uniformity.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996, 41
Copyright
Copyright © Materials Research Society 1997

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References

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