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Comparison Of Gettering Ability between I/I Defects And Si Substrate

Published online by Cambridge University Press:  15 February 2011

Mitsuhiro Horikawa and
Tomohisa Kitano
Mitsuhiro Horikawa
Affiliation:
ULSI Device Development Laboratories NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan
Tomohisa Kitano
Affiliation:
ULSI Device Development Laboratories NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Abstract

A Si wafer is contaminated with 1.5 × 1013 Fe/cm3 and the Fe gettering ability of low dose I/I defects is compared with that of a Si substrate with/without a poly-silicon back seal. Polysilicon has higher gettering ability than I/I defects and prevents Fe from gettering at these defects. When there is no poly-silicon and temperature is as low as 700°C, however, I/I defects act as gettering sites for Fe, even if the dose is as low as 2 × 1013 cm−2. Fe gettering by I/I defects leads to a decrease in minority carrier diffusion length. DLTS measurement reveals that Fe getters at I/I defects in the interstitial atom state.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996, 181
Copyright
Copyright © Materials Research Society 1997

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