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Complementary Hfet Technology for Low-Power Mixed-Mode Applications

Published online by Cambridge University Press:  10 February 2011

A. G. Baca,
M. E. Sherwin,
J. C. Zolper,
D. F. Dubbert,
V. M. Hietala,
R. J. Shul,
L. R. Sloan and
M. J. Hafich
A. G. Baca
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185–0603
M. E. Sherwin
Affiliation:
Microwave Signal, Inc., 22300 COMSAT Drive, Clarksburg, MD 20871
J. C. Zolper
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185–0603
D. F. Dubbert
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185–0603
V. M. Hietala
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185–0603
R. J. Shul
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185–0603
L. R. Sloan
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185–0603
M. J. Hafich
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, NM 87185–0603
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Abstract

Development of a complementary heterostructure field effect transistor (CHFET) technology for low-power, mixed-mode digital-microwave applications is presented. An earlier digital CHFET technology with independently optimizable transistors which operated with 319 ps loaded gate delays at 8.9 fJ is reviewed. Then work demonstrating the applicability of the digital nJFET device as a low-power microwave transistor in a hybrid microwave amplifier without any modification to the digital process is presented. A narrow band amplifier with a 0.7 × 100 μm nJFET as the active element was designed, constructed, and tested. At 1 mW operating power, the amplifier showed 9.7 dB of gain at 2.15 GHz and a minimum noise figure of 2.5 dB. In addition, next generation CHFET transistors with sub 0.5 μm gate lengths were developed. Cutoff frequencies, ft of 49 GHz and 11.5 GHz were achieved for n- and p-channel FETs with 0.3 and 0.4 μm gates, respectively. These FETs will enable both digital and microwave circuits with enhanced performance.

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References

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