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Complex Defects in Semiconductors

Published online by Cambridge University Press:  25 February 2011

B. Monemar
B. Monemar*
Affiliation:
Max-Planck-Institut für Festkörperforschung Heisenbergstr. 1, D-7000 Stuttgart 80, Federal Republic of Germany
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Abstract

Complex defects in semiconductors are briefly reviewed, with emphasis on the electronic structure. Classes of such defects with a varying degree of complexity are discussed, with reference to recent optical data for neutral defects in GaP and silicon. These include PGa- antisite related substitutional complexes in GaP, Gai- acceptor complexes in GaP, substitu-tional chalcogen complex defects in silicon and vacancy-impurity complexes in silicon.

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