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Compositional Determinations of Oxide-Nitride-Oxide Stacked Dielectric

Published online by Cambridge University Press:  25 February 2011

G.L. Waytena,
J. Hren,
J.K. Weiss,
P. Rez,
G.G. Fountain and
S.V. Hattangady
G.L. Waytena
Affiliation:
North Carolina State University, Department of Physics, Raleigh, NC
J. Hren
Affiliation:
North Carolina State University, Department of Physics, Raleigh, NC
J.K. Weiss
Affiliation:
Arizona State University, Tempe, Az
P. Rez
Affiliation:
Arizona State University, Tempe, Az
G.G. Fountain
Affiliation:
Research Triangle Institute, Research Triangle Park, NC
S.V. Hattangady
Affiliation:
Research Triangle Institute, Research Triangle Park, NC
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Abstract

Electron holography, and high spatial resolution (17Å) computer controlled Parallel Electron Energy Loss Spectrometry (PEELS) were used to probe the structure of and chemical profile across a thin silicon Oxide-Nitride-Oxide (ONO) layered structure of nominal width 10Å-50Å-10Å. We found that the layer widths are on the average 13Å-28Å-18Å, the first oxide layer was discontinuous, and the second oxide layer contained nitrogen. The nitride layer had a silicon to nitrogen concentration ratio of 1.0 ± 0.1. These results show, for the first time, the power of holography in characterizing thin, light element, amorphous layers and the importance of computer controlled parallel energy loss line scans for obtaining analytical information at the highest spatial resolution with minimum dose.

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References

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