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The “Computer-Aided Epitaxy” Si:MBE-Control System

Published online by Cambridge University Press:  22 February 2011

R. A. Kubiak,
S. M. Newstead,
A. R. Powell,
D. K. Bowen,
R. D. Barlow,
M. G. Dowsett,
T. E. Whall and
E. H. C. Parker
R. A. Kubiak
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
S. M. Newstead
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
A. R. Powell
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
D. K. Bowen
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
R. D. Barlow
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
M. G. Dowsett
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
T. E. Whall
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
E. H. C. Parker
Affiliation:
Department of Physics, University of Warwick, Coventry CV4 7AL, England
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Abstract

A dedicated, grower-friendly MBE computer control system is described, and its performance in demonstrated in growth of high resolution doped SiGe structures.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991, 55
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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