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Controlling (In, Ga)As quantum structures on high index GaAs surfaces

Published online by Cambridge University Press:  01 February 2011

Sh. Seydmohamadi,
H. Wen,
Zh. M. Wang and
G. J. Salamo
Sh. Seydmohamadi
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, Arkansas, 72701, U. S. A.
H. Wen
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, Arkansas, 72701, U. S. A.
Zh. M. Wang
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, Arkansas, 72701, U. S. A.
G. J. Salamo
Affiliation:
Department of Physics, University of Arkansas, Fayetteville, Arkansas, 72701, U. S. A.
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Abstract

We investigate the formation of (In, Ga)As self assembled quantum structures grown on different orientations of a GaAs substrate along one side of the stereographic triangle between (100) and (111)A surfaces. The samples were grown by Molecular Beam Epitaxy, monitored by Reflection High-Energy Electron Diffraction during the growth and characterized by in-situ Scanning Tunneling Microscopy and Atomic Force Microscopy. A systematic transition from zero dimensional (In, Ga)As quantum dots to one dimensional quantum wires was observed as the substrate was varied along the side of the triangle within 25° miscut from the (100) toward (111)A, which includes several high index surfaces. We propose an explanation for the role of the substrate in determining the type of the nanostructure that is formed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004, U1.8/JJ1.8/KK1.8
Copyright
Copyright © Materials Research Society 2005

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References

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