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The Core Structure of Dislocations in GaAs

Published online by Cambridge University Press:  25 February 2011

B. C. De Cooman,
K.-H. Kuesters and
C. B. Carter
B. C. De Cooman
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca NY 14853
K.-H. Kuesters
Affiliation:
Siemens AG, Zentral Bereich Technik ZFE ME43, D-8000-Munich, FRG
C. B. Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca NY 14853
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Abstract

The structural aspects of dislocations in GaAs which had been plastically deformed at high stress were studied by TEM. The glide of well-defined dislocations in their slip-plane was observed during the recombination-enchanced relaxation of the dislocations from their high-stress configuration. The strong asymmetry of dislocation velocity previously observed by other techniques is confirmed. High-resolution, electron micrographs of dissociated end-on screw dislocations were compared to computer simulated micrographs of model structures of the dislocation core. No definite conclusion regarding the exact core structure could be made due to the movement of the defects during the observation.

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