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Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures Probed by Steady-State Photo-Capacitance Spectroscopy

Published online by Cambridge University Press:  26 January 2011

Yoshitaka Nakano,
Yoshihiro Irokawa,
Yasunobu Sumida,
Shuichi Yagi and
Hiroji Kawai
Yoshitaka Nakano
Affiliation:
Chubu University, Kasugai, Aichi 487-8501, Japan
Yoshihiro Irokawa
Affiliation:
National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Yasunobu Sumida
Affiliation:
POWDEC, Oyama, Tochigi 323-0028, Japan
Shuichi Yagi
Affiliation:
POWDEC, Oyama, Tochigi 323-0028, Japan
Hiroji Kawai
Affiliation:
POWDEC, Oyama, Tochigi 323-0028, Japan
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Abstract

We have investigated a correlation between electronic deep levels and current collapses in AlGaN/GaN hetero-structures by capacitance-voltage and photo-capacitance spectroscopy techniques, using Schottky barrier diodes. Three specific deep levels located at ~2.07, ~2.80, ~3.23eV below the conduction band were found to be significantly enhanced for the severe current collapse. These levels probably originate in Ga vacancies and residual C impurities and are probably responsible for the current collapses of the AlGaN/GaN hetero-structures.

Keywords

electrical propertiesIII-Vsemiconducting

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1309: Symposium EE – Solid-State Chemistry of Inorganic Materials VIII , 2011, mrsf10-1309-ee06-40
Copyright
Copyright © Materials Research Society 2011

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