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Correlation between Processing, Composition, and Mechanical Properties of PECVD-SiN, Thin Films

Published online by Cambridge University Press:  16 February 2011

D. C. H. Yu and
J. A. Taylor
D. C. H. Yu
Affiliation:
AT&T Bell Laboratories Allentown, PA 18103, U.S.A.
J. A. Taylor
Affiliation:
AT&T Bell Laboratories Allentown, PA 18103, U.S.A.
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Abstract

The inter-relationship between plasma processing, composition, and mechanical properties of PECVD-SiN x , thin films was investigated. Results showed that by varying the gas feeding ratio of NH3/SiH 4 N 2, one can obtain PECVD-SiN x , films of different composition and streu levels. For high stress films, the deposition rate is low, values of index of refraction and Si/N ratio are small. On the other hand, film density of such films is high; values of Young's modulus and N-H/Si-H relative bond density are large. A model which correlates film stress to that contributed by (1) lattice distortion induced by Si-H and NH bondings, (2) ion bombardment, (3) thermal mismatch between PECVD-SiN x films and silicon substrate, and (4) intrinsic stress introduced during the formation of covalent Si-N bonding is proposed and examined in this work.

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References

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