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Coupling Between Precipitation and Plastic Deformation DuringElectromigration in a Passivated Al (0.5wt%Cu) Interconnect

Published online by Cambridge University Press:  17 March 2011

R.I. Barabash,
G.E. Ice,
N. Tamura,
B.C. Valek,
R. Spolenak,
J.C. Bravman and
J.R. Patel
R.I. Barabash
Affiliation:
Metals & Ceramics Divisions, Oak Ridge National Laboratory, Oak Ridge TN 37831
G.E. Ice
Affiliation:
Metals & Ceramics Divisions, Oak Ridge National Laboratory, Oak Ridge TN 37831
N. Tamura
Affiliation:
Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley CA 94720
B.C. Valek
Affiliation:
Dept. Materials Science & Engineering, Stanford University, Stanford CA 94305
R. Spolenak
Affiliation:
Max Planck Institut fur Metallforschung, Heisenbergstrasse 3, D-7056 Stuttgart, Germany
J.C. Bravman
Affiliation:
Dept. Materials Science & Engineering, Stanford University, Stanford CA 94305
J.R. Patel
Affiliation:
Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley CA 94720
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Abstract

In the present paper the evolution of the dislocation structure duringelectromigration in different regions along the Al(Cu) interconnect line isconsidered. It is shown that plastic deformation increases in the regionsclose to cathode end of the interconnect line. A coupling between thedissolution, growth and re-precipitation of Al2Cu precipitates and theelectromigration-induced plastic deformation of grains in interconnects isobserved. Possible mechanism of the Cu doping effect on the improvedelectromigration resistance of the Al(Cu) interconnects is discussed.

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