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Critical Microscopic Processes in Semiconductor Lasers

Published online by Cambridge University Press:  15 February 2011

Mark S. Hybertsen,
M. A. Alam,
G. A. Baraff and
R. K. Smith
Mark S. Hybertsen
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
M. A. Alam
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
G. A. Baraff
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
R. K. Smith
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
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Abstract

The cascade of microscopic processes relevant to semiconductor laser operation is outlined. An integrated laser simulator which encapsulates these processes is applied to illustrate the connection between an accurate model of the optical gain in the quantum wells and measured characteristics of representative 1.3 μm InGaAsP/InP lasers. These results highlight the impact of carrier transport effects on the observed optical gain and the modulation response of semiconductor lasers.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 579: Symposium B – The Optical Properties of Materials , 1999, 181
Copyright
Copyright © Materials Research Society 2000

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References

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