Hostname: page-component-7b7567c8c-kwt9d Total loading time: 0 Render date: 2026-11-13T10:55:03.381Z Has data issue: false hasContentIssue false
  • English
  • Français

Critical Technologies for Poly-Si TFT in High Resolution AM-LCD

Published online by Cambridge University Press:  10 February 2011

I-Wei Wu
I-Wei Wu*
Affiliation:
Electronics Research & Service Organization, Industrial Technology Research Institute, 195–4, Sec. 4, Chung Hsing Rd, Chutung, Hsinchu, Taiwan 310, R.O.C.
Get access

Abstract

Polycrystalline silicon (p-Si) TFT offers higher aperture ratio with integrated driver circuits compared to the conventional a-Si TFT in AM-LCD application. The advantages of the p-Si TFT as the pixel switching element will be more pronounced for AM-LCDs with large number of scan lines and/or high pixel density. This paper reviews challenges and issues associated with the technology of p-Si TFT, particularly in active silicon layer deposition, solid phase and laser crystallization, hydrogenation, leakage current, performance of different device architectures and reliability. Critical issues affecting the p-Si TFT AMLCD pixel design are analyzed, including: lithographic resolution and overlay accuracy, pixel density and aspect ratio, display format, storage to LC capacitance ratio, and gate dielectric thickness. Predictions on the regimes of dominance for different flat-panel technologies by advantages in performance and-or cost with respect to panel size and pixel density will be presented.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997, 125
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Morozumi, S., Oguchi, K., Yazama, S., Kodaira, T., Ohshima, H. and Mano, T., SID Int'l Symp. Digest Technical Papers, 1983, pp. 156–159.Google Scholar
2. Wu, I-W., Polycrystalline Semiconductors III-Physcis and Technology, Solid State phenomena, vol. 37–38, 1994, pp. 553–564.Google Scholar
3. Ohshima, H., Conf. Record 14th IDRC, 1994, pp. 26–29.Google Scholar
4. Wu, I-W., SID Int'l Symp. Digest Technical Papers, 1995, pp. 19–22.Google Scholar
5. Wu, I-W., Int'l AM-LCD Workshop Digest of Technical Papers, 1995, pp. 7–10.Google Scholar
6. Wu, I-W., Chiang, A., Fuse, M., Ovecoglu, L. and Huang, T. Y., J. Appl. Phys., 65, 1989, pp. 4036–4039.Google Scholar
7. Inoue, S., Matsuo, M., Kitawada, K., Takenaka, S., Higashi, S., Ozawa, T., Matsueda, Y., Nakazawa, T., Ohshima, H., Conf. Record 15th IDRC, 1995, pp. 339–342.Google Scholar
8. Wu, I-W., Stuber, S., Tsai, C. C., Yao, W., Lewis, A., Fulks, R., Chiang, A. and Thompson, M., SID Int'l Symp., Digest Technical Papers, 1992, pp. 615–618.Google Scholar
9. Matsueda, Y., Inoue, S., Takenaka, S., Ozawa, T., Fujikawa, S., Nakazawa, T., Ohshima, H., SID Int'l Symp. Digest Technical Papers, 1996, pp. 21–24.Google Scholar
10. Yamamoto, Y., Mrita, T., Yamane, Y., Funada, F., Awane, K., Conf. Record 15th IDRC, 1995, pp. 941–942.Google Scholar
11. Mimura, A., Mikami, Y., Kuwabara, K., Mori, Y., Nagai, M., Nagae, Y., Kaneko, E., Conf. Record 14th IDRC, 1994, pp. 126–129.Google Scholar
12. Wu, I-W., Lewis, A. G., Huang, T. Y. and Chiang, A., IEEE Electron Devices Lett., EDL–10, 1989. pp. 123–125.Google Scholar
13. Wu, I-W., Huang, T. Y., Jackson, W. B., Lewis, A. G. and Chiang, A., IEEE Electron Device Lett., EDL–12, 1991, pp. 181–183.Google Scholar
14. Wu, I-W., Lewis, A. G., Huang, T. Y., Jackson, W. B. and Chiang, A., EEDM Digest, 1990, pp. 867–870.Google Scholar
15. Wu, I-W., Lewis, A. and Chiang, A., Conf. Record 14th IDRC, 1992, pp. 455–459.Google Scholar
16. Yamashita, T., Matsumoto, T., Shimada, T., Akebi, Y., Kubo, M., Fujioka, K., Tsubota, K., Yoshimura, Y., Takafuji, Y., Awane, K., SID Int'l Symp. Digest Technical Papers, 1994, pp. 83–86.Google Scholar
17. Okumura, F., Asada, H., Sera, K., Hirata, K., Kurakagi, K., Hirai, Y., Kaneko, S., Hamada, K., Kodama, K., Mineji, A., Saito, S., Ikeda, K., Miyakoshi, K., Imajo, M., SID Int'l Symp. Digest Technical Papers, 1994, pp. 79–82.Google Scholar
18. Wu, I-W., King, T. J., Hack, M., Tsai, C. C., Lewis, A. G., and Chiang, A., Proc. of the 1993 Int'l Semicond. Dev. Res. Symp., 1993, pp. 21–25.Google Scholar
19. Wu, I-W., Lewis, A. G., Huang, T. Y., and Chiang, A., SID In'l Symp., Digest Technical Papers, 1990, pp. 307–310.Google Scholar
20. Wu, I-W., J. SID, Vol. 2, 1994, pp. 1–14.Google Scholar
21. Wu, I-W., Jackson, W. B., Huang, T. Y., Lewis, A. G. and Chiang, A., IEEE Electron Dev. Lett., EDL–11, 1990, pp. 167–170.Google Scholar
22. Hack, M., Lewis, A. G., and Wu, I-W., IEEE Transaction on Electron Device, ED–40, 1993, pp. 890–897.Google Scholar
23. Lewis, A., Wu, I-W., Hack, M., Chiang, A., and Bruce, R., IEDM Digest, 1991, pp. 575–578.Google Scholar
24. Howard, W. E., Record 14th IDRC, 1994, pp. 6–10.Google Scholar
25. Lewis, A. G and Wu, I-W., J. of the Inst. Electr. Inform. Comm. Engineers (Japanese), J76–C–11, 1993, pp. 211–226.Google Scholar
26. Ohori, T., Takei, M., Takahara, K., Okabe, M., Abe, M., SID In'l Symp. Digest Technical Papers, 1996, pp. 673–676.Google Scholar
27. Furuta, M., Maegawa, S., Sano, H., Yoshioka, T., Uraoka, Y., Kobayashi, I., Kawamura, T., Miyata, Y., Conf. Record 16th IDRC, 1996.Google Scholar