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Cross-Sectional Tem Sample Preparation Method Using Fib Etching for Thin-Film Transistor

Published online by Cambridge University Press:  10 February 2011

K. Tsujimoto,
S. Tsuji,
H. Takatsuji,
K. Kuroda,
H. Saka and
N. Miura
K. Tsujimoto
Affiliation:
ITES Ltd., Ichimiyake, Yasu-cho, Yasu-gun, Shiga 520-23, Japan.
S. Tsuji
Affiliation:
Display Technology, IBM Japan, Ltd., Shimotsuruma, Yamato-shi, Kanagawa 242, Japan
H. Takatsuji
Affiliation:
Display Technology, IBM Japan, Ltd., Shimotsuruma, Yamato-shi, Kanagawa 242, Japan
K. Kuroda
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-01, Japan
H. Saka
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-01, Japan
N. Miura
Affiliation:
ITES Ltd., Ichimiyake, Yasu-cho, Yasu-gun, Shiga 520-23, Japan.
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Abstract

A rapid and precise sample preparation method using focused ion beam (FIB) etching was developed for cross-sectional transmission electron microscopy (X-TEM) analysis of a thin-film transistor (TFT) fabricated on a glass substrate. Gallium (Ga) ions accelerated at 30 kV and at various incident beam angles were applied during FIB etching to create a uniform thin wall. We successfully prepared X-TEM specimens of long and fragile aluminum (Al) whiskers formed on thin Al films in TFT metallization, where a strong charge is built up during FIB etching. The effect of ion-beam-assisted tungsten deposition prior to FIB etching is discussed. A whisker having a length not exceeding approximately 10 #x00B5;m can be successfully etched to a thickness of 200 nm while keeping its original shape. The performance of this technique is demonstrated in applications to etching at other fragile locations related to TFTs.

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