Hostname: page-component-7b7567c8c-jswmv Total loading time: 0 Render date: 2026-11-15T17:49:33.070Z Has data issue: false hasContentIssue false
  • English
  • Français

Crystallization and Melting of Amorphous Silicon on a Microsecond Time Scale

Published online by Cambridge University Press:  28 February 2011

G. L. Olson,
J. A. Roth,
E. Nygren,
A. P. Pogany and
J. S. Williams
G. L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
J. A. Roth
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
E. Nygren
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne, Australia
A. P. Pogany
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne, Australia
J. S. Williams
Affiliation:
Microelectronics Technology Centre, RMIT, Melbourne, Australia
Get access

Abstract

Measurements of the competition beween solid phase epitaxy, solid phase random nucleation, and melting in amorphous Si on a microsecond time scale are reported. We find that the behavior of amorphous Si under microsecond pulsed dye laser irradiation depends strongly on film thickness and temperature. In “thin” (≲1000 Å) films solid phase epitaxy is observed at temperatures up to and exceeding 1300°C with random nucleation dominating at T>1330° C; however, melting of amorphous Si does not occur. In contrast, in “thick” (2600 Å) amorphous films melting is observed at T˜1190°C. These results are discussed with respect to measurements obtained previously in the nanosecond time regime using Q-switched laser heating and in the 0.1–1 millisecond regime using “chopped beam” cw laser heating.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Thompson, Michael O., Galvin, G.J., Mayer, J.W., Peercy, P.S., Poate, J.M., Jacobson, D.C., Cullis, A.G. and Chew, N.G., Phys Rev. Lett. 52, 2360 (1984); P.S. Peercy and Michael O. Thompson, Mat. Res. Soc. Symp. Proc. 35, 53 (1985).Google Scholar
2. Spaepen, F. and Turnbull, D., in Laser Solid Interactions and Laser Processing, edited by Ferris, S.D., Leamy, H.J., and Poate, J.M. (AIP, New York, 1978), pp. 73–78; B.G. Bagley and H.S. Chen, (AIP, New York, 1978), pp. 97–101.Google Scholar
3. Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M. and Jacobson, D.C., Appl. Phys. Lett. 42 698 (1983).Google Scholar
4. For a review see: Olson, G.L., Kokorowski, S.A., Roth, J.A. and Hess, L.D., Mat. Res. Soc. Symp. Proc. 13, 141 (1983); G.L. Olson, Mat. Res. Soc. Symp. Proc. 35, 25 (1985) and references therein.Google Scholar
5. Kokorowski, S.A., Olson, G.L., Roth, J.A. and Hess, L.D., in Laser and Electron-Beam Interactions With Solids, edited by Appleton, B.R. and Celler, G.K. (Elsevier Science Publishing Co., 1982), pp. 195–202; S.A. Kokorowski, G.L. Olson, J.A. Roth and L.D. Hess, Phys. Rev. Lett. 48, 498 (1982).Google Scholar
6. Roth, J.A., Kokorowski, S.A., Olson, G.L. and Hess, L.D., in Laser and Electron-Beam Interactions With Solids, edited by Appleton, B.R. and Celler, G.K. (Elsevier Science Publishing Co., 1982), pp. 169–176.Google Scholar
7. Olson, G.L., Roth, J.A., Rytz-Froidevaux, Y. and Narayan, J., Mat. Res. Soc. Symp. Proc. 35, 211 (1985).Google Scholar
8. Cullis, A.G., Mat. Res. Soc. Symp. Proc. 35. 15 (1985).Google Scholar