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The Crystal-Melt Interface in Si or Ge

Published online by Cambridge University Press:  21 February 2011

Frans Spaepen and
Yan Shao
Frans Spaepen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
Yan Shao
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
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Abstract

From the nucleation data on undercooling of liquid Si or Ge, crystal-melt interfacial tensions are calculated. Only a temperature-dependent tension can account simultaneously for the results of experiments on bulk and thin film Si. The observed temperature dependence can be accounted for by reasonable values of the interfacial entropy and enthalpy. The analysis is used to determine the temperature-dependent interfacial tension for Ge. A comparison of results for Ge and Si indicates that homogeneous nucleation has not been achieved in the undercooling of bulk liquid Si.

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References

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