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Current State and Future Challenge in HgCdTe MBE Technology

Published online by Cambridge University Press:  22 February 2011

Owen K. Wu
Owen K. Wu*
Affiliation:
Hughes Research Laboratories 3011 Malibu Canyon Road, Malibu, CA 90265
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Abstract

Significant progress has been made in HgCdTe MBE technology over the last two years. Device quality materials have been grown with the alloy compositions required for short-wavelength infrared (SWIR), 1-3 micron to LWIR (long-wavelength infrared), 8-12 micron applications. Indeed, the observation of low defect density (EPD<2×105/cm2), long minority carrier lifetime and efficient IR photoluminescence attests to the device quality of HgCdTe epilayers grown by MBE. In addition, the breakthroughs to achieve In (N-type) and As (P-type) doping in situ have provided greater flexibilities for fabricating advanced heterojunction devices. High performance IR imaging arrays have been fabricated and IR images were obtained. Also, dual-band detectors and injection infrared diode lasers which have been demonstrated recently are considered. Finally, additional developments and the future challenges in HgCdTe MBE technology are discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994, 565
Copyright
Copyright © Materials Research Society 1994

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