Hostname: page-component-7b7567c8c-fvjsw Total loading time: 0 Render date: 2026-11-15T22:09:43.273Z Has data issue: false hasContentIssue false
  • English
  • Français

Current Understanding and Modeling of Boron-Interstitial Clusters

Published online by Cambridge University Press:  01 February 2011

Peter Pichler
Peter Pichler*
Affiliation:
Fraunhofer-Institut für Integrierte Bauelemente, Bauelementetechnologie Schottkystrasse 10, 91058 Erlangen, Germany
Get access

Abstract

Scaling of devices requires not only shallow junctions but also high levels of dopant activation. For boron as the main p-type dopant, the latter requirement is especially problematic since small clusters of boron atoms and self-interstitials, known also as boron-interstitial clusters (BICs), were found to deactivate and immobilize large fractions of the implanted atoms during post-implantation annealing. In this article, the properties of BICs are reviewed and their influence on semiconductor processes are highlighted.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002, C3.1
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Wittmaack, K., Maul, J., and Schulz, F. in Ion Implantation in Semiconductors and Other Materials ed. by Crowder, B. L., New York: Plenum Press, 119 (1973).Google Scholar
[2] Hofker, W. K., Werner, H. W., Oosthoek, D. P., and Grefte, H. A. M. de, ibid., 133 (1973).Google Scholar
[3] Hofker, W. K., Werner, H. W., Oosthoek, D. P., and Grefte, H. A. M. de, Appl. Phys. 2, 265 (1973).Google Scholar
[4] Michel, A. E. in Mat. Res. Soc. Symp. Proc. 52: Rapid Thermal Processing, edited by T. O. Sedgwick, T. E. Seidel, and B.Y. Tsaur, 3 (1986); A. E. Michel, W. Rausch, P. A. Ronsheim, and R. H. Kastl, Appl. Phys. Lett. 50, 416 (1987); Appl. Phys. Lett. 51, 487 (1987).Google Scholar
[5] Schwettmann, F. N., J. Appl. Phys. 45, 1918 (1974); H. Ryssel, K. Müller, K. Haberger, R. Henkelmann, and F. Jahnel, Appl. Phys. 22, 35 (1980); D. Fan, J. Huang, R. J. Jaccodine, P. Kahora, and F. Stevie, Appl. Phys. Lett. 50, 1745 (1987). V. E. Borisenko and S. G. Yudin, phys. stat. sol. (a) 101, 123 (1987); R. Angelucci, R. Cembali, P. Negrini, M. Servidori, and S. Solmi, J. Electrochem. Soc. 134, 3130 (1987); T. O. Sedgwick, A. E. Michel, V. R. Deline, S. A. Cohen, and J. B. Lasky, J. Appl. Phys. 63, 1452 (1988); Y. Kim, H. Z. Massoud, and R. B. Fair, J. Electronic Materials 18, 143 (1989); O. W. Holland, Appl. Phys. Lett. 54, 798 (1989); R. B. Fair, J. Electrochem. Soc. 137, 667 (1990).Google Scholar
[6] Chu, W. K., Numan, M. Z., Zhang, J. Z., and Sandhu, G. S., Nuclear Instruments and Methods in Physics Research B 37/38, 365 (1989).Google Scholar
[7] Cowern, N. E. B., Jos, J. F. F., Janssen, K. T. F., and Wachters, A. J. H. in Mat. Res. Soc. Symp. Proc. 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, edited by D. J. Wolford, J. Bernholc, and E. E. Haller, 605 (1990).Google Scholar
[8] Cowern, N. E. B., Janssen, K. T. F., and Jos, H. F. F., J. Appl. Phys. 68, 6191 (1990).Google Scholar
[9] Solmi, S., Baruffaldi, F., and Canteri, R., J. Appl. Phys. 69, 2135 (1991).Google Scholar
[10] Armigliato, A., Nobili, D., Ostoja, P., Servidori, M., and Solmi, S. in Electrochem. Soc. Proc. 77–2: Semiconductor Silicon 1977, edited by H. R. Huff and E. Sirtl, 638 (1977).Google Scholar
[11] Hofker, W. K., Werner, H. W., Oosthoek, D. P., and Koeman, N. J., Appl. Phys. 4, 125 (1974).Google Scholar
[12] Eaglesham, D. J., Stolk, P. A., Gossmann, H.J., and Poate, J. M., Appl. Phys. Lett. 65, 2305 (1994).Google Scholar
[13] Stolk, P. A., Gossmann, H.J., Eagleshm, D. J., Jacobson, D. C., Poate, J. M., and Luftman, H. S., Appl. Phys. Lett. 66, 568 (1995).Google Scholar
[14] Stolk, P. A., Gossmann, H.J., Eaglesham, D. J., and Poate, J. M., Nuclear Instruments and Methods in Physics Research B 96, 187 (1995).Google Scholar
[15] Simpson, T. W., Goldberg, R. D., Mitchell, I. V., and Baribeau, J.M. in Mat. Res. Soc. Symp. Proc. 438: Materials Modification and Synthesis by Ion Beam Processing, edited by D. E. Alexander, N. W. Cheung, B. Park, and W. Skorupa, 15 (1997); T. W. Simpson, I. V. Mitchell, and J.M. Baribeau in Mat. Res. Soc. Symp. Proc. 469: Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, 277 (1997).Google Scholar
[16] Castell, M. R., Simpson, T. W., Mitchell, I. V., Perovic, D. D., and Baribeau, J.M., Appl. Phys. Lett. 74, 2304 (1999).Google Scholar
[17] Cowern, N. E. B., Jos, H. F. F., and Janssen, K. T. F., Materials Science and Engineering B 4, 101 (1989).Google Scholar
[18] Hane, M. and Matsumoto, H., IEDM Techn. Digest, 701 (1991); IEEE Trans. Electron Devices 40, 1215 (1993).Google Scholar
[19] Mathiot, D. and Pfister, J. C., J. Appl. Phys. 55, 3518 (1984).Google Scholar
[20] Baccus, B. and Vandenbossche, E. in Simulation of Semiconductor Devices and Processes 5, edited by Selberherr, S., Stippel, H., and Strasser, E., Wien: Springer-Verlag, 133 (1993).Google Scholar
[21] Baccus, B. and Vandenbossche, E., Microelectronics Journal 26, 235 (1995).Google Scholar
[22] Tan, T. Y., Föll, H., and Krakow, W. in Inst. Phys. Conf. Ser.: Microscopy of Semiconducting Materials 1981, edited by Cullis, A. G. and Joy, D. C., 1 (1981).Google Scholar
[23] Pelaz, L., Jaraiz, M., Gilmer, G. H., Gossmann, H.J., Rafferty, C. S., Eaglesham, D. J., and Poate, J. M., Appl. Phys. Lett. 70, 2285 (1997).Google Scholar
[24] Caturla, M.J., Rubia, T. Diaz de la, Zhu, J., and Johnson, M. in Mat. Res. Soc. Symp. Proc. 469: Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, 335 (1997).Google Scholar
[25] Pelaz, L., Gilmer, G. H., Gossmann, H.J., Rafferty, C. S., Jaraiz, M., and Barbolla, J., Appl. Phys. Lett. 74, 3657 (1999).Google Scholar
[26] Laithwaite, K., Newman, R. C., and Totterdell, D. H. J., J. Phys. C 8, 236 (1975).Google Scholar
[27] Newman, R. C. and Smith, R. S., Physics Letters 29A, 671 (1967); in Localized Excitations in Solids, edited by R. F. Wallis, New York, NY, USA: Plenum Press, 177 (1968).Google Scholar
[28] Tsvetov, V., Allred, W., and Spitzer, W. G., ibid., 185 (1968).Google Scholar
[29] Bean, A. R., Morrison, S. R., Newman, R. C., and Smith, R. S., J. Phys. C 5, 379 (1972).Google Scholar
[30] Drevinsky, P. J. and DeAngelis, H. M. in Thirteenth International Conference on Defects in Semiconductors, edited by Kimerling, L. C. and Parsey, J. M. Jr, The Metallurgical Society of AIME, 807 (1985); P. J. Drevinsky, C. E. Caefer, S. P. Tobin, J. C. Mikkelsen, Jr., and L. C. Kimerling in Mat. Res. Soc. Symp. Proc. 104: Defects in Electronic Materials, edited by M. Stavola, S. J. Pearton, and G. Davies, 167 (1988).Google Scholar
[31] Khan, A., Yamaguchi, M., Ohshita, Y., Dharmarasu, N., Araki, K., Abe, T., Itoh, Hisayoshi, Ohshima, T., Imaizumi, M., and Matsuda, S., J. Appl. Phys. 90, 1170 (2001).Google Scholar
[32] Swanson, M. L., Vacuum 39, 87 (1989).Google Scholar
[33] Vailionis, A., Glass, G., Desjardins, P., Cahill, D. G., and Greene, J. E., Phys. Rev. Lett. 82, 4464 (1999).Google Scholar
[34] Thonke, K., Weber, J., Wagner, J., and Sauer, R., Physica 116B, 252 (1983); K. Thonke, N. Bürger, G. D. Watkins, and R. Sauer in Thirteenth International Conference on Defects in Semiconductors, edited by L. C. Kimerling and J. M. Parsey, Jr., The Metallurgical Society of AIME, 823 (1985).Google Scholar
[35] Tipping, A. K. and Newman, R. C., Semicond. Sci. Technol. 2, 389 (1987).Google Scholar
[36] Mizushima, I., Watanabe, M., Murakoshi, A., Hotta, M., Kashiwagi, M., and Yoshiki, M., Appl. Phys. Lett. 63, 373 (1993).Google Scholar
[37] Yamauchi, J., Aoki, N., and Mizushima, I., Phys. Rev. B 55, R10245 (1997).Google Scholar
[38] Yamauchi, J., Aoki, N., and Mizushima, I., phys. stat. sol. (b) 210, 273 (1998).Google Scholar
[39] Zhang, L. H., Jones, K. S., Chi, P. H., and Simons, D. S., Appl. Phys. Lett. 67, 2025 (1995).Google Scholar
[40] Griffin, P. B., Lever, R. F., S. Huang, R. Y., Kennel, H. W., Packan, P. A., and Plummer, J. D., IEDM Techn. Digest, 295 (1993).Google Scholar
[41] Haynes, T. E., Eaglesham, D. J., Stolk, P. A., Gossmann, H.J., Jacobson, D. C., and Poate, J. M., Appl. Phys. Lett. 69, 1376 (1996).Google Scholar
[42] Lilak, A. D., Earles, S. K., Law, M. E., and Jones, K. S., Appl. Phys. Lett. 74, 2038 (1999).Google Scholar
[43] Mannino, G., Cowern, N. E. B., Roozeboom, F., and Berkum, J. G. M. van, Appl. Phys. Lett. 76, 855 (2000).Google Scholar
[44] Solmi, S., Bersani, M., Sbetti, M., Lundsgaard Hansen, J., and Larsen, A. Nylandsted, J. Appl. Phys. 88, 4547 (2000).Google Scholar
[45] Mannino, G., Solmi, S., Privitera, V., and Bersani, M., Appl. Phys. Lett. 79, 3764 (2001).Google Scholar
[46] Cowern, N. E. B., Cacciato, A., Custer, J. S., Saris, F. W., and Vandervorst, W., Appl. Phys. Lett. 68, 1150 (1996).Google Scholar
[47] Cacciato, A., Klappe, J. G. E., Cowern, N. E. B., Vandervost, W., Biró, L. P., Custer, J. S., and Saris, F. W., J. Appl. Phys. 79, 2314 (1996).Google Scholar
[48] Uematsu, M., J. Appl. Phys. 84, 4781 (1998).Google Scholar
[49] Mokhberi, A., Griffin, P. B., and Plummer, J. D. in 2000 International Conference on Simulation of Semiconductor Processes and Devices, Piscataway, NJ, USA: IEEE, 163 (2000).Google Scholar
[50] Kobayashi, H., Nomachi, I., Kusanagi, S., and Nishiyama, F. in Mat. Res. Soc. Symp. Proc. 669: Si Front-End Processing – Physics and Technology of Dopant-Defect Interactions III, edited by Jones, K. S., Giles, M. D., Stolk, P., Matsuo, J., and Jones, E. C., J.5.3.1 (2001).Google Scholar
[51] Kyllesbech Larsen, K., Privitera, V., Coffa, S., Priolo, F., Campisano, S. U., and Carnera, A., Phys. Rev. Lett. 76, 1493 (1996).Google Scholar
[52] Cowern, N. E. B., Huizing, H. G. A., Stolk, P. A., Visser, C. C. G., Kruif, R. C. M. de, Larsen, K. Kyllesbech, Privitera, V., Nanver, L. K., and Crans, W., Nuclear Instruments and Methods in Physics Research B 120, 14 (1996).Google Scholar
[53] Jones, K. S., Elliman, R. G., Petravic, M. M., and Kringhøj, P., Appl. Phys. Lett. 68, 3111 (1996).Google Scholar
[54] Zhu, J., Diaz de la Rubia, T., Yang, L. H., Maillhot, C., and Gilmer, G. H., Phys. Rev. B 54, 4741 (1996).Google Scholar
[55] Zhu, J. in Mat. Res. Soc. Symp. Proc. 469: Defects and Diffusion in Silicon Processing, edited by Rubia, T. Diaz de la, Coffa, S., Stolk, P. A., and Rafferty, C. S., 151 (1997); Comput. Mater. Sci. 12, 309 (1998).Google Scholar
[56] Windl, W., Bunea, M., Stumpf, R., Dunham, S. T., and Masquelier, M. P. in 1999 International Conference on Modeling and Simulation of Microsystems MSM'99, Cambridge, MA, USA: Computational Publications, 369 (1999); W. Windl, M. M. Bunea, R. Stumpf, S. T. Dunham, and M. P. Masquelier in Mat. Res. Soc. Symp. Proc. 568: Si Front-End Processing – Physics and Technology of Dopant-Defect Interactions, edited by H.J. L. Gossmann, T. E. Haynes, M. E. Law, A. Nylandsted Larsen, and S. Odanaka, 91 (1999); Phys. Rev. Lett. 83, 4345 (1999).Google Scholar
[57] Sadigh, B., Lenosky, T. J., Theiss, S. K., Caturla, M.J., Rubia, T. Diaz de la, and Foad, M. A., Phys. Rev. Lett. 83, 4341 (1999).Google Scholar
[58] Jeong, J.W. and Oshiyama, A. in Proceedings of the 25th International Conference on the Physics of Semiconductors, edited by Miura, N. and Ando, T., Berlin, Germany: Springer, 1381 (2001).Google Scholar
[59] Luo, W., Rasband, P. B., Clancy, P., and Roberts, B. W., J. Appl. Phys. 84, 2476 (1998). W. Luo and P. Clancy, J. Appl. Phys. 89, 1596 (2001).Google Scholar
[60] Okamoto, M., Takayanagi, K., and Takeda, S. in Mat. Res. Soc. Symp. Proc. 510: Defect and Impurity Engineered Semiconductors II, 343 (1998).Google Scholar
[61] Lenosky, T. J., Sadigh, B., Theiss, S. K., Caturla, M. J., and Rubia, T. Diaz de la, Appl. Phys. Lett. 77, 1834 (2000).Google Scholar
[62] Liu, X.Y., Windl, W., and Masquelier, M. P., Appl. Phys. Lett. 77, 2018 (2000).Google Scholar
[63] Theiss, S. K., Caturla, J. M., Johnson, M. D., Zhu, J., Lenosky, T., Sadigh, B., and Rubia, T. Diaz de la, Thin Solid Films 365, 219 (2000).Google Scholar
[64] Windl, W., Liu, X.Y., and Masquelier, M. P., phys. stat. sol. (b) 226, 37 (2001).Google Scholar
[65] Alippi, P., Ruggerone, P., and Colombo, L. in Solid State Phenomena 82–84: Gettering and Defect Engineering in Semiconductor Technology GADEST 2001, edited by V. Raineri, F. Priolo, M. Kittler, and H. Richter, 163 (2002).Google Scholar
[66] Caturla, M. J., Johnson, M. D., and Rubia, T. Diaz de la, Appl. Phys. Lett. 72, 2736 (1998). M.J. Caturla, S. K. Theiss, T. J. Lenosky, and T. Diaz de la Rubia, IEDM Techn. Digest, 489 (1998); S. K. Theiss, M.J. Caturla, T. J. Lenosky, B. Sadigh, and T. Diaz de la Rubia in 2000 International Conference on Simulation of Semiconductor Processes and Devices, Piscataway, NJ, USA: IEEE, 18 (2000).Google Scholar
[67] Lilak, A. D., Earles, S. K., Jones, K. S., and Law, M. E., IEDM Techn. Digest, 493 (1997); S. Chakravarthi and S. T. Dunham in Simulation of Semiconductor Processes and Devices 1998, edited by K. De Meyer and S. Biesemans, Wien: Springer-Verlag, 55 (1998); D. Stiebel, P. Pichler, and H. Ryssel in Mat. Res. Soc. Symp. Proc. 568: Si Front-End Processing – Physics and Technology of Dopant-Defect Interactions, edited by H.J. L. Gossmann, T. E. Haynes, M. E. Law, A. Nylandsted Larsen, and S. Odanaka, 141 (1999); S. Chakravarthi and S. T. Dunham in 2000 International Conference on Simulation of Semiconductor Processes and Devices, Piscataway, NJ, USA: IEEE, 167 (2000); J. Appl. Phys. 89, 3650 (2001).Google Scholar
[68] Pichler, P. and Stiebel, D., Nuclear Instruments and Methods in Physics Research B 186, 256 (2002).Google Scholar