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Deep Level Transient Spectroscopy: Defect Characterization in Semiconductor Devices

Published online by Cambridge University Press:  25 February 2011

N. M. Johnson
N. M. Johnson*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304
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Abstract

The use of deep-level transient spectroscopy for electronic defect characterization in semiconductors is reviewed with emphasis on the underlying principles and concepts.

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986, 75
Copyright
Copyright © Materials Research Society 1986

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