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Deep-Levels Associated with Implanted Titanium in Silicon

Published online by Cambridge University Press:  28 February 2011

Craig M. Ransom and
S.S. Iyer
Craig M. Ransom
Affiliation:
IBM Corporation, T. J. Watson Research Center Yorktown Heights, New York 10598
S.S. Iyer
Affiliation:
IBM Corporation, T. J. Watson Research Center Yorktown Heights, New York 10598
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Abstract

Titanium was ion implanted at 180 KeV into p-type silicon to form a buried TiSi2 layer. DLTS measurements of n+p junctions have shown two minority carrier traps at Ec − Et = 0.24 and 0.51 eV. Also, a single majority trap at E v + E t = 0.41 eV was observed. The concentrations of these levels were calculated to be approximately 1013 cm−3. DLTS measurements of low-fluence 50 KeV Ti implantations using Schottky diodes showed four levels dependent on silcon type.

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