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Defect Aggregates In Silicon

Published online by Cambridge University Press:  28 February 2011

James W. Corbett,
John C. Corelli,
Uros Desnica and
Lawrence C. Snyder
James W. Corbett
Affiliation:
Physics Department, SUNY/Albany, Albany, NY 12222 USA.
John C. Corelli
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180 USA.
Uros Desnica
Affiliation:
Physics Department, SUNY/Albany, Albany, NY 12222 USA.
Lawrence C. Snyder
Affiliation:
Chemistry Department, SUNY/Albany, Albany, NY 12222 USA.
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Abstract

In this brief review we consider the vacancy-related, the vacancy oxygen-related, and the vacancy-hydrogen-related defects. We note the common opportunity for chemically-driven partial dissociation of defects. With this background we briefly survey what is known of the oxygen agglomerates, noting that we favor the ylid ( the saddle-point for oxygen diffusion) as the thermal donor core, but that the (vacancy + di-oxygen) complex can also be a core, and that the latter defect can occur when the strain-energy reaches the.point that a vacancy-interstitial pair can be created, causing interstitial emission from the oxygen agglomerate. We note as well that the emission of Si≡0 is energetically favored versus emission of an unbonded interstitial.

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