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Defect Control and Defect Engineering of Transition-metal Silicides

Published online by Cambridge University Press:  26 February 2011

Haruyuki Inui,
Katsushi Tanaka and
Kyosuke Kishida
Haruyuki Inui
Affiliation:
haruyuki.inui@materials.mbox.media.kyoto-u.ac.jp, Kyoto University, Department of Materials Science and Engineering, Sakyo-ku, Kyoto, 606-8501, Japan, +81-75-753-5467, +81-75-753-5461
Katsushi Tanaka
Affiliation:
k.tanaka@materials.mbox.media.kyoto-u.ac.jp, Kyoto University, Department of Materials Science and Engineering, Sakyo-ku, Kyoto, 606-8501, Japan
Kyosuke Kishida
Affiliation:
k.kishida@materials.mbox.media.kyoto-u.ac.jp, Kyoto University, Department of Materials Science and Engineering, Sakyo-ku, Kyoto, 606-8501, Japan
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Abstract

The microstructure, defect structure and thermoelectric properties of two different semiconducting transition-metal silicides, ReSi1.75 and Ru2Si3 upon alloying with a substitutional element with a valence electron number different from that of the constituent metal have been investigated in order to see if the crystal and defect structures of these silicides and thereby their physical properties can be controlled through defect engineering according to the valence electron counting rule. The Si vacancy concentration and its arrangement can be successfully controlled in ReSi1.75 while the relative magnitude of the metal and silicon subcell dimensions in the chimney-ladder structures can be successfully controlled in Ru2Si3. As a result, the improvement in the thermoelectric properties and the p- to n-type conduction transition are successfully achieved respectively for these semiconducting transition-metal silicides.

Keywords

defectsthermoelectricitytransmission electron microscopy (TEM)

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 980: Symposium II – Advanced Intermetallic-Based Alloys , 2006, 0980-II04-01
Copyright
Copyright © Materials Research Society 2007

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References

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