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Defect Identification in Silicon Using Electron Nuclear Double Resonance

Published online by Cambridge University Press:  28 February 2011

C.A.J. Ammerlaan,
M. Sprenger,
R. Van Kemp and
D.A. Van Wezep
C.A.J. Ammerlaan
Affiliation:
Natuurkundig Laboratorium der Universiteit van Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands
M. Sprenger
Affiliation:
Natuurkundig Laboratorium der Universiteit van Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands
R. Van Kemp
Affiliation:
Natuurkundig Laboratorium der Universiteit van Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands
D.A. Van Wezep
Affiliation:
Natuurkundig Laboratorium der Universiteit van Amsterdam, Valckenierstraat 65, 1018 XE Amsterdam, The Netherlands
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Abstract

The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.

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